Title :
Numerical study on very high speed silicon PiN diode possibility for power ICs in comparison with SiC-SBD
Author :
Takahama, Kenichi ; Omura, Ichiro
Author_Institution :
Kyushu Inst. of Technol., Kitakyushu, Japan
Abstract :
600 V PiN diodes reverse recovery speed have been a bottle neck in reduction of system losses. In some applications such as PFC (Power Factor Control) SiC-SBDs have been replacing PiN diodes in recent years. The high speed reverse recovery characteristics of SiC-SBDs have contributed to the PFC downsizing and the efficiency improvement, only limited number of the diodes has been installed due to the high cost and the difficulty in implementation into power integrated circuits (Power ICs). In this work we have tried to find out possibilities to improve the PiN diodes capabilities in high speed applications based on analytical model, 1D and 2D-device simulation as our research tools. It is found that the reverse recovery can be improved by injection efficiency control with shallow P-/N-emitter. Simulated SOI structure shows the possibility to attain high speed characteristics comparable to SiC-SBDs.
Keywords :
elemental semiconductors; p-i-n diodes; power integrated circuits; power semiconductor diodes; silicon; wide band gap semiconductors; 1D device simulation; 2D-device simulation; N-emitter; P-emitter; PFC downsizing; PiN diode reverse recovery speed; Schottky barrier diodes; Si; SiC; analytical model; injection efficiency control; power IC; power factor control SiC-SBD; power integrated circuits; simulated SOI structure; system loss reduction; very high speed silicon PiN diode; voltage 600 V; Analytical models; Charge carrier lifetime; Equations; Power integrated circuits; Power supplies; Schottky diodes; Semiconductor diodes; Shape; Silicon carbide; Switching frequency;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X