Title :
A new way to alleviate the RC IGBT snapback phenomenon: The Super Junction solution
Author :
Antoniou, M. ; Udrea, F. ; Bauer, F. ; Nistor, I.
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
Abstract :
In this paper we present a new device, the 3.3kV semi-SuperJunction Reverse Conducting Insulated Gate Bipolar Transistor that can help to alleviate the voltage snapback of the Reverse Conducting IGBT while we achieve significant improvement in the on-state vs switching trade-off performance of the IGBT. The introduction of the SuperJunction structure in the drift region of the RC IGBT reduces the effective on-state resistance under unipolar current conduction. This ultimately affects the voltage snapback value as well as the reverse recovery of the diode while turn off.
Keywords :
insulated gate bipolar transistors; power semiconductor devices; RC IGBT; reverse conducting insulated gate bipolar transistor; superjunction; unipolar current conduction; voltage 3.3 kV; voltage snapback; Anodes; Cathodes; Costs; Equivalent circuits; Insulated gate bipolar transistors; Packaging; Power semiconductor switches; Semiconductor diodes; Silicon; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
