Title :
A novel low-voltage trench power MOSFET with improved avalanche capability
Author :
Ng, Jacky C W ; Sin, Johnny K O ; Sumida, Hitoshi ; Toyoda, Yoshiaki ; Ohi, Akihiko ; Tanaka, Hiroyuki ; Nishimura, Takeyoshi ; Ueno, Katsunori
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
In this paper, a novel trench power MOSFET with improved avalanche capability and specific on-resistance is presented. The novel device is fabricated along with the conventional trench power MOSFET for comparison. The avalanche current of the novel device is improved by 30% because the n+-source/p-body junction in the structure is minimized. Moreover, the specific on-resistance is reduced by 32% due to the smaller pitch of the novel device. The measured breakdown voltage of the devices is approximately 54 V.
Keywords :
avalanche breakdown; low-power electronics; power MOSFET; avalanche capability; avalanche current; breakdown voltage; low-voltage trench power MOSFET; Avalanche breakdown; Boron; Etching; Fabrication; MOSFET circuits; Power MOSFET; Power measurement; Power semiconductor devices; Rapid thermal annealing; Silicon;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
