DocumentCode
525912
Title
A new p-channel bidirectional trench power MOSFET for battery charging and protection
Author
Robb, Francine ; Ball, Alan ; Huang, Kirk
Author_Institution
ON Semicond., Phoenix, AZ, USA
fYear
2010
fDate
6-10 June 2010
Firstpage
405
Lastpage
408
Abstract
A new p-channel bidirectional power MOSFET (Bi-DFET) for 15-30V battery charging applications is detailed. A specially-designed bidirectional trench MOSFET was built on chip with lateral PMOS devices that connect the trench FET body to the source/drain terminal of the highest potential. Bi-DFET prototypes had greater than 2.5X lower specific on-resistance than two back-to-back standard trench MOSFETs, which are commonly used in bidirectional sockets. Thus this device is very promising for reducing the device size in “space sensitive” applications.
Keywords
battery management systems; power MOSFET; Bi-DFET; battery charging; battery protection; bidirectional socket; lateral PMOS device; p-channel bidirectional trench power MOSFET; space sensitive application; Batteries; MOSFET circuits; Power MOSFET; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location
Hiroshima
ISSN
1943-653X
Print_ISBN
978-1-4244-7718-0
Electronic_ISBN
1943-653X
Type
conf
Filename
5544012
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