Title :
A study of the bonding-wire reliability on the chip surface electrode in IGBT
Author :
Keda, Yoshinari ; Hokazono, Hiroaki ; Sakaf, S. ; Nishimura, Tomohiro ; Takahashi, Yoshikaz
Author_Institution :
Adv. Technol. Lab., Fuji Electr. Holdings Co., Ltd., Matsumoto, Japan
Abstract :
The reliability of IGBT chip surface electrode for bonding-wires is described. The power cycling (P/C) capability of an IGBT module is improved due to a suppression of chip surface aluminum (Al) electrode degradation with Nickel (Ni) plating. The P/C capability obtained with the Ni plating electrode is about 3 times higher than that with the Al electrode at a high temperature condition. Such a good performance comes from the barrier property of the Ni plating layer.
Keywords :
aluminium; insulated gate bipolar transistors; nickel; semiconductor device reliability; Al; IGBT; Ni; bonding-wire reliability; chip surface electrode; chip surface electrode degradation; plating electrode; power cycling capability; Bonding; Copper; Electrodes; Insulated gate bipolar transistors; Motor drives; Power semiconductor devices; Solar energy; Temperature; Testing; Traction power supplies;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
