Title :
Development of ultrasonic welding for IGBT module structure
Author :
Nishimura, Yoshitaka ; Kido, Kazumasa ; Momose, Fumihiko ; Goto, Tomoaki
Author_Institution :
Semicond. Group, Fuji Electr. Syst., Matsumoto, Japan
Abstract :
This paper presents the ultrasonic welding technique for the copper terminals of large current, high reliability IGBT modules. Investigated topics are the strength of the bonding inferred from the microstructure, the effect of terminal bonding location on the damage to the insulator layer of module structure, and the reliability of large IGBT modules with the ultrasonic welding comparing with conventional soldering.
Keywords :
insulated gate bipolar transistors; soldering; ultrasonic welding; copper terminal; high reliability IGBT module structure; microstructure; soldering; terminal bonding; ultrasonic welding; Aluminum; Bonding; Copper; Insulated gate bipolar transistors; Packaging; Power system reliability; Soldering; Solid state circuits; Welding; Wire;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
