Title :
Experimental study on current collapse of GaN MOSFETs, HEMTs and MOS-HEMTs
Author :
Li, Z. ; Marron, T. ; Naik, H. ; Huang, W. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We report on the experimental results of current collapse measurements, using both conventional pulse method and a new DC method, performed on GaN MOSFETs, HEMTs and MOS-HEMTs. The current collapse phenomena were measured and compared between the different device types, epilayer dopings, RESURF region lengths and MOS channel lengths, at both room temperature and elevated temperatures.
Keywords :
III-V semiconductors; MOSFET; gallium compounds; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; GaN; MOS channel lengths; MOS-HEMT; MOSFET; RESURF region lengths; current collapse; high electron mobility transistors; temperature 293 K to 298 K; Current measurement; Doping; Gallium nitride; HEMTs; Length measurement; MODFETs; MOSFETs; Performance evaluation; Pulse measurements; Temperature;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
