DocumentCode
525921
Title
Experimental study on current collapse of GaN MOSFETs, HEMTs and MOS-HEMTs
Author
Li, Z. ; Marron, T. ; Naik, H. ; Huang, W. ; Chow, T.P.
Author_Institution
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2010
fDate
6-10 June 2010
Firstpage
225
Lastpage
228
Abstract
We report on the experimental results of current collapse measurements, using both conventional pulse method and a new DC method, performed on GaN MOSFETs, HEMTs and MOS-HEMTs. The current collapse phenomena were measured and compared between the different device types, epilayer dopings, RESURF region lengths and MOS channel lengths, at both room temperature and elevated temperatures.
Keywords
III-V semiconductors; MOSFET; gallium compounds; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; GaN; MOS channel lengths; MOS-HEMT; MOSFET; RESURF region lengths; current collapse; high electron mobility transistors; temperature 293 K to 298 K; Current measurement; Doping; Gallium nitride; HEMTs; Length measurement; MODFETs; MOSFETs; Performance evaluation; Pulse measurements; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location
Hiroshima
ISSN
1943-653X
Print_ISBN
978-1-4244-7718-0
Electronic_ISBN
1943-653X
Type
conf
Filename
5544027
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