Title :
New VDMOS structure with Discontinuous Thick Inter-Body Oxide to reduce gate-to-drain charge
Author :
Roig, J. ; Mouhoubi, S. ; Gassot, P. ; Charavel, R. ; Suvkhanov, A. ; Moens, P. ; Bauwens, F. ; Tack, M.
Author_Institution :
Power Technol. Centre - Corp. R&D, ON Semicond., Oudenaarde, Belgium
Abstract :
A new vertical power MOSFET (VDMOS) structure with a Discontinuous Thick Inter-Body Oxide (DTIBO) is presented and experimentally analyzed in this paper. The new structure substantially reduces the Qgd*sRon figure-of-merit without excessive BVds penalization with respect to the conventional VDMOS. Moreover, the undesired hot-carried injection (HCI) effects are also assessed.
Keywords :
hot carriers; power MOSFET; VDMOS structure; discontinuous thick interbody oxide; vertical power MOSFET; Human computer interaction; MOSFET circuits; Power MOSFET;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
