A comparison of charge dynamics in the reverse-conducting RC IGBT and Bi-mode Insulated Gate Transistor BiGT

Author

Storasta, Liutauras ; Kopta, Arnost ; Rahimo, Munaf

Author_Institution

Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland

fYear

2010

fDate

6-10 June 2010

Firstpage

391

Lastpage

394

Abstract

In this paper we present the analysis of charge dynamics in the reverse conducting (RC)-IGBT and the Bi mode Insulating Gate Transistor (BiGT). The differences and similarities between the two device concepts are analyzed with the aid of 2D device simulations using a realistic 3.3kV device model. The influence of the anode shorts dimensioning and buffer design on the on-state characteristics and the snap-back effect is discussed and the advantages of the hybrid BiGT structure are demonstrated. It is shown that the application of the BiGT structure decouples the conventional RC-IGBT design trade-offs with respect to the diode and IGBT areas in relation to the snap-back effect. Main design principles for optimal IGBT and diode performance are outlined.

Keywords

carrier mobility; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; 2D device simulation; BiGT; anode short dimensioning; bimode insulated gate transistor; buffer design; charge dynamic; reverse conducting IGBT; reverse conducting RC IGBT; voltage 3.3 kV; Anodes; Bismuth; Charge carrier processes; Design optimization; Insulated gate bipolar transistors; Insulation; Power semiconductor devices; Semiconductor diodes; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on

Conference_Location

Hiroshima

ISSN

1943-653X

Print_ISBN

978-1-4244-7718-0

Electronic_ISBN

1943-653X

Type

conf

Filename

5544093