Inhibiting effect of middle broad buffer layer diode using hydrogen-related shallow donor on reverse recovery oscillation

We experimentally confirmed that a 1200V/150A silicon diode with middle broad buffer layer (MBBL) than a bench-marked electron irradiated (EI) exhibited much excellent soft recovery performance. The MBBL profile was directly formed by the FZ wafer with hydrogen-related shallow donor (HRSD) induced by proton irradiation. With the same reverse recovery loss (E_RR) MBBL diode exhibited 20% lower reverse recovery peak current (I_RP) and 30% lower overshoot voltage. For threshold DC-bus voltage beyond which the voltage waveforms start oscillating, the MBBL diode has 150V higher than that of the reference. These improvements were achieved by the MBBL with the HRSD.