• DocumentCode
    526082
  • Title

    A new 1200V HVIC with a novel high voltage Pch-MOS

  • Author

    Yoshino, M. ; Shimizu, K. ; Terashima, T.

  • Author_Institution
    Power Device Works, Mitsubishi Electr. Corp., Fukuoka, Japan
  • fYear
    2010
  • fDate
    6-10 June 2010
  • Firstpage
    93
  • Lastpage
    96
  • Abstract
    A new 1200V HVIC, including both a high voltage Nch-LDMOS and a high voltage Pch-MOS, is successfully fabricated without any additional process steps to our 600V HVIC. The 1200V Nch-LDMOS is realized with benefit of the 2nd Generation Divided RESURF Structure. The 1200V Pch-MOS is also realized with a novel multi-striped drain structure. As a result of the new drain structure, more than three times larger output current compared to a conventional one is obtained without decreasing the breakdown voltage.
  • Keywords
    MOS integrated circuits; power integrated circuits; HVIC; breakdown voltage; divided RESURF sructure; high voltage Nch-LDMOS; high voltage Pch-MOS; high voltage integrated circuit; multi-striped drain structure; voltage 1200 V; voltage 600 V; Conductivity; Dielectrics; Diodes; Electrodes; Leakage current; Logic devices; Low voltage; Multichip modules; Power semiconductor devices; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
  • Conference_Location
    Hiroshima
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-7718-0
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • Filename
    5544940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=526082