Integration of 1200V SOI gate driver ICs into a medium power IGBT module package

Author

Vogler, Bastian ; Rossberg, Matthias ; Herzer, Reinhard ; Reusser, Lars

Author_Institution

SEMIKRON Elektron., Nuremberg, Germany

fYear

2010

fDate

6-10 June 2010

Firstpage

97

Lastpage

100

Abstract

A novel approach for medium power IPMs is presented combining a 1200V, 50A IGBT/FWD-Inverter module based on spring contact technology with new developed advanced silicon on insulator (SOI) gate driver ICs in a reliable cost effective package with excellent thermal resistance. The measurement results (static, dynamic and three phase power inverter tests) demonstrate the driver and system performance. The new system approach for industrial standard drive applications supports the market trend towards integrated power module solutions already known from the low power consumer market.

Keywords

driver circuits; insulated gate bipolar transistors; silicon-on-insulator; thermal resistance; IGBT/FWD-inverter module; SOI gate driver IC; current 50 A; medium power IPM; power IGBT module package; silicon on insulator; spring contact technology; thermal resistance; voltage 1200 V; Contact resistance; Costs; Electrical resistance measurement; Insulated gate bipolar transistors; Packaging; Power measurement; Power system reliability; Silicon on insulator technology; Springs; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on

Conference_Location

Hiroshima

ISSN

1943-653X

Print_ISBN

978-1-4244-7718-0

Electronic_ISBN

1943-653X

Type

conf

Filename

5544943