Title :
A contrast between rule-based and model-based dummy metal fill in ASIC design
Author :
Chen, Xiaoming ; Li, Songsong ; Zhang, Jianwei
Author_Institution :
Fac. of Electron. Inf. & Electr. Eng., Dalian Univ. of Technol., Dalian, China
Abstract :
Chemical-mechanical polishing (CMP) is an essential process in deep-submicrometer LSI manufacturing to achieve Chip´s planarization. It includes two processes: back-end-of-line (BEOL) and front-end-of-line (FEOL). We focus the problem on BEOL in 65nm Copper Process. Through model-based dummy metal fill is becoming a tendency recently, we proved that rule-based dummy fill is appropriate still. We apply the improved rule-based dummy fill into a middle scale design. We investigated the oxide and metal thickness, the capacitance variation and variation of layout data size. The result show that improved rule-based dummy fill is still effective in 65nm process, and model-based dummy fill is not better than the rule-based obviously.
Keywords :
application specific integrated circuits; chemical mechanical polishing; integrated circuit manufacture; large scale integration; ASIC design; CMP; back-end-of-line; chemical-mechanical polishing; chip´s planarization; deep-submicrometer LSI manufacturing; large scale integration; model-based dummy metal fill; rule-based dummy metal fill; size 65 nm; Capacitance; Copper; Couplings; Layout; Resistance; Semiconductor device modeling;
Conference_Titel :
Intelligent Control and Information Processing (ICICIP), 2010 International Conference on
Conference_Location :
Dalian
Print_ISBN :
978-1-4244-7047-1
DOI :
10.1109/ICICIP.2010.5564167