Modeling of MIM capacitors in 0.25 µm SiGe BiCMOS process up to 140 GHz

This paper presents a modeling technique for meta-linsulator-metal capacitors up to 140 GHz realized in a high performance 0.25 μm SiGe BiCMOS process. The presented modeling technique is also applicable for different semiconductor technologies. Starting from the parasitic effect of capacitor plates until the substrate and ground effects, the method implemented here includes all the significant parasitic elements. On-chip coupling elements between the capacitor to ground and substrate have also been considered. The modeled capacitors have been compared with electromagnetic simulations and measurements. The results show a very good accuracy of the model for millimeter-wave frequencies which makes it quite appropriate for circuit design in V-band and W-band frequencies. As a case study, the simulation results of a power amplifier designed with help of this model is presented and compared with measurement and full electromagnetic simulation results.