• DocumentCode
    527926
  • Title

    Analog design oriented ultra-deep-submicron CMOS technology analysis

  • Author

    Pollissard-Quatremère, Guillaume ; Gosset, Geoffroy ; Flandre, Denis

  • Author_Institution
    ICTEAM, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
  • fYear
    2010
  • fDate
    18-21 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Based on the analysis of 65 nm MOSFETs characteristics with regards to analog design requirements, this paper firstly highlights the inaccuracy of known rules of thumb and simple relations used by designers to size their circuits and reach a compromise on their specifications. We secondly propose a more accurate approach for quick estimation of short-channel transistor sizing and compare it to existing approaches in the case of a wide-band low-power OTA.
  • Keywords
    CMOS analogue integrated circuits; MOSFET; MOSFET characteristics; analog design oriented ultra-deep-submicron CMOS technology analysis; short-channel transistor sizing; size 65 nm; wideband low-power OTA; CMOS integrated circuits; Capacitance; Estimation; Logic gates; MOSFETs; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ph.D. Research in Microelectronics and Electronics (PRIME), 2010 Conference on
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4244-7905-4
  • Type

    conf

  • Filename
    5587130