Title :
Analog design oriented ultra-deep-submicron CMOS technology analysis
Author :
Pollissard-Quatremère, Guillaume ; Gosset, Geoffroy ; Flandre, Denis
Author_Institution :
ICTEAM, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
Based on the analysis of 65 nm MOSFETs characteristics with regards to analog design requirements, this paper firstly highlights the inaccuracy of known rules of thumb and simple relations used by designers to size their circuits and reach a compromise on their specifications. We secondly propose a more accurate approach for quick estimation of short-channel transistor sizing and compare it to existing approaches in the case of a wide-band low-power OTA.
Keywords :
CMOS analogue integrated circuits; MOSFET; MOSFET characteristics; analog design oriented ultra-deep-submicron CMOS technology analysis; short-channel transistor sizing; size 65 nm; wideband low-power OTA; CMOS integrated circuits; Capacitance; Estimation; Logic gates; MOSFETs; Semiconductor device modeling;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2010 Conference on
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-7905-4