Fully monolithically integrated X-band power amplifier without external matching

Author

Meshcheriakov, Ievgenii ; Solomko, Valentyn A. ; Weger, Peter

Author_Institution

Circuit Design, Tech. Univ. of Brandenburg, Cottbus, Germany

fYear

2010

fDate

18-21 July 2010

Firstpage

1

Lastpage

4

Abstract

In this paper a fully monolithically integrated power amplifier for X-band is presented. The push-pull amplifier uses an on-chip transformer for input matching, an autotransformer with capacitive divider for interstage matching, and an LC-balun for output matching. It does not require any external matching circuits. The power amplifier is implemented in a 0.35 μm SiGe bipolar technology. At 10 GHz operating frequency and a supply voltage of 1.5 V the amplifier achieves maximum power added efficiency greater than 30%, gain 23 dB, and maximum output power greater than 23 dBm.

Keywords

MMIC power amplifiers; autotransformers; baluns; bipolar MMIC; LC-balun; MMIC power amplifiers; X-band; bipolar technology; capacitive divider; frequency 10 GHz; gain 23 dB; input matching; interstage matching; monolithically integrated power amplifier; on-chip transformer; power added efficiency; push-pull amplifier; size 0.35 mum; voltage 1.5 V; Gain; Impedance; Impedance matching; Inductors; Metals; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2010 Conference on

Conference_Location

Berlin

Print_ISBN

978-1-4244-7905-4

Type

conf

Filename

5587153