DocumentCode :
527953
Title :
Development of vertical superlattices in silicon for on-chip thermal management
Author :
Parasuraman, J. ; Angelescu, D. ; Basset, P. ; Bardoux, M.
Author_Institution :
Lab. ESYCOM, Univ. Paris-Est, Paris, France
fYear :
2010
fDate :
18-21 July 2010
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, we propose a novel approach to on-chip cooling by thermionic emission by using vertical superlattices fabricated directly into the silicon wafer as opposed to conventional planar additive deposition methods used by most other groups. The advantages of this method are (i) significantly lower fabrication costs and (ii) adequate number of superlattice layers translating to higher efficiency. Initial fabrication has been completed on micro-scale `superlattices´ and work on `nano´-superlattices for actual thermionic emission and on-chip cooling are on-going. Measurements of thermal conductivity have been proposed to be made on the completed devices using the 2ω method, which is also described here. Further work will lead to conclusive results from this approach.
Keywords :
cooling; thermal management (packaging); on-chip cooling; on-chip thermal management; planar additive deposition method; silicon wafer; superlattice layers; thermal conductivity; thermionic emission; vertical superlattices; Conductivity; Copper; Silicon; Superlattices; Thermal conductivity; DRIE; On-chip cooling; thermionic emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2010 Conference on
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-7905-4
Type :
conf
Filename :
5587157
Link To Document :
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