Title :
Optical properties and application of MOVPE-grown III-V nanowires
Author :
Motohisa, J. ; Varadwaj, K.S.K. ; Tomioka, K. ; Fukui, T.
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
We report on the optical properties of III-V semiconductor nanowires (NWs) grown by by selective-area matalorganic vapor phase epitaxy and its application to photonic devices. Results for NWs containing heterostructures are mainly discussed.
Keywords :
III-V semiconductors; MOCVD; nanowires; optical properties; III-V nanowires; MOVPE; heterostructures; optical properties; photonic devices; Epitaxial growth; Epitaxial layers; Gallium arsenide; Light emitting diodes; Nanowires; Photonics; Substrates;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
