Title :
Empirical model including band-to-band Coulomb interaction for refractive index spectra of quaternary semiconductors
Author :
Lin, E.Y. ; Lay, T.S.
Author_Institution :
Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
The refractive indices of (Al0.48In0.52As)z(Ga0.47In0.53As)1-z, and GaxIn1-xAsyP1-y quaternary materials is presented from a model that takes into account of band-to-band Coulomb interaction and Urbach broadening. We apply an accurate absorption model to calculate the contribution near band-edge region by a complete closed-form Kramers-Kronig transform. A Sellmeier-type single-oscillator model includes all the additional absorption at higher energies.
Keywords :
Kramers-Kronig relations; absorption coefficients; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical materials; refractive index; semiconductor materials; (Al0.48In0.52As)z(Ga0.47In0.53As)1-z; GaxIn1-xAsyP1-y; Sellmeier-type single oscillator model; Urbach broadening; accurate absorption model; band-to-band Coulomb interaction; closed form Kramers-Kronig transform; near band-edge region; quaternary materials; quaternary semiconductors; refractive index spectra; Absorption; Biological system modeling; Data models; Materials; Photonic band gap; Photonics; Refractive index;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
