DocumentCode
528215
Title
Analysis of the electrorefractive effect in Ge/SiGe coupled quantum well for silicon based optical modulators
Author
Iseri, Y. ; Yamada, H. ; Arakawa, T. ; Tada, K. ; Haneji, N.
Author_Institution
Grad. Sch. of Eng., Yokohama Nat. Univ., Yokohama, Japan
fYear
2010
fDate
5-9 July 2010
Firstpage
678
Lastpage
679
Abstract
A Ge/SiGe coupled quantum well for optical modulators based on phase modulation was proposed and its electrorefractive characteristics are theoretically analyzed using the K·p perturbation theory. This structure is promising for low-voltage Mach Zehnder modulators.
Keywords
Ge-Si alloys; Mach-Zehnder interferometers; electro-optical effects; electro-optical modulation; germanium; perturbation theory; phase modulation; semiconductor quantum wells; Ge-SiGe; K·p perturbation theory; coupled quantum well; electrorefractive effect; low-voltage Mach Zehnder modulators; phase modulation; silicon based optical modulators; Absorption; Electric fields; High speed optical techniques; Optical modulation; Phase modulation; Silicon; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location
Sapporo
Print_ISBN
978-1-4244-6785-3
Type
conf
Filename
5588387
Link To Document