DocumentCode :
52822
Title :
Inverted Organic Photodetectors With ZnO Electron-Collecting Buffer Layers and Polymer Bulk Heterojunction Active Layers
Author :
Jaehoon Jeong ; Sungho Nam ; Hwajeong Kim ; Youngkyoo Kim
Author_Institution :
Dept. of Chem. Eng., Kyungpook Nat. Univ., Daegu, South Korea
Volume :
20
Issue :
6
fYear :
2014
fDate :
Nov.-Dec. 2014
Firstpage :
130
Lastpage :
136
Abstract :
We report inverted-type organic photodetectors with zinc oxide (ZnO) electron-collecting buffer layers and polymer:fullerene bulk heterojunction active layers. A visible light was detected by the inverted organic photodetectors when a background UV light was ON, whereas no photocurrent signal was measured for visible lights without the background UV light. Interestingly, UV lights solely were successfully detected without any surrounding UV light. The present devices exhibited fast and stable photo-responses under modulated or continuous UV-visible lights.
Keywords :
II-VI semiconductors; buffer layers; conducting polymers; fullerene compounds; organic semiconductors; photodetectors; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds; ZnO; background UV light; electron-collecting buffer layers; inverted organic photodetectors; photo-responses; polymer:fullerene bulk heterojunction active layers; visible light; Current measurement; Lighting; Photoconductivity; Photodetectors; Voltage measurement; Wavelength measurement; Zinc oxide; Organic photodetector (OPD); P3HT/PC61BM; UV-visible detection; ZnO;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2014.2354649
Filename :
6891138
Link To Document :
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