Title :
The responsivity improvement of waveguide photodetector with InP crystallographic slope and tapered SiOx facet integration
Author :
Yang, Chyi-Da ; Chen, Chung-Nan ; Lei, Po-Hsun ; Lee, Chih-Yu
Author_Institution :
Dept. of Microelectron. Eng., Nat. Kaohsiung Marine Univ., Kaohsiung, Taiwan
Abstract :
The light input tapered-facet in front of the active region through a simple chemical etching enlarges substantially the light-coupling aperture and therefore assists the light collection of the thin absorption layer outside of its area. The improved responsivity of novel WGPDs is consistent with the theoretical simulation.
Keywords :
III-V semiconductors; absorption coefficients; etching; gallium arsenide; indium compounds; integrated optics; optical fabrication; optical waveguides; photodetectors; silicon compounds; InGaAsP; InP; SiOx; chemical etching; crystallographic slope; light-coupling aperture; tapered facet integration; thin absorption layer; waveguide photodetector; Absorption; Chemicals; Etching; High speed optical techniques; Indium phosphide; Optical device fabrication; Optical waveguides;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
