Title :
All-silicon and in-line integration of a variable optical attenuator and photodetector
Author :
Park, Sungbong ; Yamada, Koji ; Tsuchizawa, Tai ; Watanabe, Toshifumi ; Nishi, Hidetaka ; Shinojima, Hiroyuki ; Itabashi, Sei-ichi
Author_Institution :
NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
Abstract :
We demonstrate in-line integration of a variable optical attenuator (VOA) and a photodetector (PD) based on a submicrometer silicon rib waveguide for 1550 nm. These devices are lateral p-i-n diodes. The VOA works in basis of free carrier absorption by carrier injection, while the PD utilizes defect-level-mediated photon absorption. We present characterizations of the PD and synchronous operation of those devices.
Keywords :
optical attenuators; p-i-n diodes; photodetectors; all-silicon; carrier injection; defect-level-mediated photon absorption; free carrier absorption; in-line integration; p-i-n diodes; photodetector; submicrometer silicon rib waveguide; synchronous operation; variable optical attenuator; wavelength 1550 nm; Absorption; Bandwidth; Optical attenuators; Optical device fabrication; Optical waveguides; Photonics; Silicon;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
