DocumentCode :
528373
Title :
Transverse optical confinement in zinc silicate nanocrystalline layer
Author :
Yang, H.Y. ; Yu, S.F. ; Lau, S.P.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2010
fDate :
5-9 July 2010
Firstpage :
534
Lastpage :
535
Abstract :
Transverse optical confinement in zinc oxide (ZnO) random cavities on Si substrate is achieved by a self-generated zinc silicate (Zn2SiO4) layer formed between the interface of ZnO and Si after thermal annealing.
Keywords :
II-VI semiconductors; annealing; interface structure; nanofabrication; nanostructured materials; optical materials; photoluminescence; self-assembly; semiconductor growth; voids (solid); wide band gap semiconductors; zinc compounds; Si; Si substrate; Zn2SiO4; ZnO-Si; emission spectrum; interface phenomena; self-generated zinc silicate layer; thermal annealing; transverse optical confinement; zinc oxide random cavities; zinc silicate nanocrystalline layer; Annealing; Optical films; Optical reflection; Silicon; Substrates; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
Type :
conf
Filename :
5588585
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=528373
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