A Novel Hybrid Integrated Photodetector Based on a Cone Absorption Cavity

Author

Xinye Fan ; Yongqing Huang ; Xiaomin Ren ; Xiaofeng Duan ; Xueqiang Zhang ; Fuquan Hu ; Qing Liu ; Qi Wang ; Shiwei Cai ; Xia Zhang

Author_Institution

State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China

Volume

31

Issue

8

fYear

2013

fDate

15-Apr-13

Firstpage

1234

Lastpage

1239

Abstract

A novel hybrid integrated photodetector with flat-top steep-edge spectral response, which consists of a Si-based multi-cavity Fabry-Pérot (F-P) filter and an InP-based cone absorption cavity (with a 0.2 m In_0.53Ga_0.47As absorption layer), has been designed and fabricated. The operating lightwave is well confined to the cone absorption, and experiences multiple reflections across the absorption layer. Thus, an absorption enhancement effect without resonance can be achieved. Based on multi-cavity F-P structure and a cone cavity, this device can get good flat-top steep-edge spectral response and high quantum efficiency. The photodetector is fabricated by bonding a Si-based multi-cavity F-P filter with an InP-based cone absorption cavity. An integrated device with a peak quantum efficiency of 60% around 1550 nm, the dB band of 0.5 nm, and the 25 dB band of 1.06 nm, is simultaneously obtained.

Keywords

III-V semiconductors; bonding processes; elemental semiconductors; gallium arsenide; indium compounds; infrared spectra; integrated optoelectronics; optical design techniques; optical fabrication; optical filters; photodetectors; reflectivity; silicon; Si-InP-In_0.53Ga_0.47As; Si-based multicavity Fabry-Perot filter; absorption enhancement effect; absorption layer; bonding; cone absorption cavity; flat-top steep-edge spectral response; hybrid integrated photodetector; integrated device; lightwave operation; multicavity F-P structure; quantum efficiency; reflections; size 0.2 mum; Absorption; Cavity resonators; Mirrors; Optical fiber communication; Optical filters; Photodetectors; Photonics; Photodetectors; filters; semiconductor devices; thin films;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2013.2246137

Filename

6461036