DocumentCode :
52931
Title :
A Novel Hybrid Integrated Photodetector Based on a Cone Absorption Cavity
Author :
Xinye Fan ; Yongqing Huang ; Xiaomin Ren ; Xiaofeng Duan ; Xueqiang Zhang ; Fuquan Hu ; Qing Liu ; Qi Wang ; Shiwei Cai ; Xia Zhang
Author_Institution :
State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
Volume :
31
Issue :
8
fYear :
2013
fDate :
15-Apr-13
Firstpage :
1234
Lastpage :
1239
Abstract :
A novel hybrid integrated photodetector with flat-top steep-edge spectral response, which consists of a Si-based multi-cavity Fabry-Pérot (F-P) filter and an InP-based cone absorption cavity (with a 0.2 m In0.53Ga0.47As absorption layer), has been designed and fabricated. The operating lightwave is well confined to the cone absorption, and experiences multiple reflections across the absorption layer. Thus, an absorption enhancement effect without resonance can be achieved. Based on multi-cavity F-P structure and a cone cavity, this device can get good flat-top steep-edge spectral response and high quantum efficiency. The photodetector is fabricated by bonding a Si-based multi-cavity F-P filter with an InP-based cone absorption cavity. An integrated device with a peak quantum efficiency of 60% around 1550 nm, the dB band of 0.5 nm, and the 25 dB band of 1.06 nm, is simultaneously obtained.
Keywords :
III-V semiconductors; bonding processes; elemental semiconductors; gallium arsenide; indium compounds; infrared spectra; integrated optoelectronics; optical design techniques; optical fabrication; optical filters; photodetectors; reflectivity; silicon; Si-InP-In0.53Ga0.47As; Si-based multicavity Fabry-Perot filter; absorption enhancement effect; absorption layer; bonding; cone absorption cavity; flat-top steep-edge spectral response; hybrid integrated photodetector; integrated device; lightwave operation; multicavity F-P structure; quantum efficiency; reflections; size 0.2 mum; Absorption; Cavity resonators; Mirrors; Optical fiber communication; Optical filters; Photodetectors; Photonics; Photodetectors; filters; semiconductor devices; thin films;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2013.2246137
Filename :
6461036
Link To Document :
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