Title :
Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing
Author :
Ghadi, Hemant ; Shetty, Saikalash ; Adhikary, Sourav ; Balgarkashi, Akshay ; Manohar, Ashutosh ; Chakrabarti, Subhananda
Author_Institution :
Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
We report the effects of rapid thermal annealing on the optical, structural, and device properties of 30 layer strain-coupled InAs/GaAs quantum dot infrared photodetectors. Stability in the photoluminescence peak is observed for annealing up to 800°C, which has not been previously reported. Cross-sectional transmission electron microscopy images show preservation of quantum dots is observed up to 800°C. Device with total capping thickness of 150 nm annealed at 750°C exhibit a fivefold enhancement in spectral intensity compared to as-grown devices and increase in the temperature of detector operation is observed from 100 to 140 K from the same device. The annealed devices exhibited a single-order enhancement in peak detectivity compared to as-grown quantum dot infrared photodetector.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; photoluminescence; rapid thermal annealing; semiconductor quantum dots; spectral line intensity; transmission electron microscopy; InAs-GaAs; capping thickness; cross-sectional transmission electron microscopy; operating temperature; optical properties; peak detectivity; photoluminescence; rapid thermal annealing; spectral intensity; strain-coupled quantum dot infrared photodetectors; structural properties; temperature 750 degC; temperature 800 degC; Annealing; Gallium arsenide; Performance evaluation; Photodetectors; Quantum dots; Strain; Thermal stability; Infrared detectors; Photodetector; Photoluminescence; Quantum dots; photodetectors; photoluminescence; quantum dots;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2015.2425433
