DocumentCode :
530159
Title :
Theoretical investigation of terahertz pulses generated from ultrafast photoconductive switches
Author :
Ma, Z. ; Ma, H. ; Yang, C. ; Feng, K.
Author_Institution :
Beijing Inst. of Radio Metrol. & Meas., Beijing, China
Volume :
1
fYear :
2010
fDate :
17-20 Sept. 2010
Firstpage :
1
Lastpage :
4
Abstract :
The technique of terahertz pulses generated from the photoconductive switches has been applied in the ultrafast electrical pulse metrology recently. A lumped-element theoretical model is established to describe the performance of the LT-GaAs ultrafast photoconductive switch used in the ultrafast pulse standard. Based on the model, waveforms and power spectrums of the generated terahertz pulses are calculated under 840 nm optical excitations. And comparisons between the theoretical results and the experimental results are carried out.
Keywords :
III-V semiconductors; electro-optical switches; gallium arsenide; microwave photonics; optical pulse generation; photoconducting switches; terahertz wave generation; GaAs; lumped-element theoretical model; optical excitation; power spectrums; terahertz pulse generation; ultrafast electrical pulse metrology; ultrafast photoconductive switches; wavelength 840 nm; Coplanar waveguides; Equations; Mathematical model; Optical pulses; Optical switches; Substrates; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signals Systems and Electronics (ISSSE), 2010 International Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6352-7
Type :
conf
DOI :
10.1109/ISSSE.2010.5606923
Filename :
5606923
Link To Document :
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