Title :
Electrothermal effects in InP DHBT integrated current mirrors
Author :
Bouvier, Y. ; Johansen, T. ; Nodjadjim, V. ; Ouslimani, A. ; Konczykowska, A.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
A method based on measurement and simulation of current mirrors is proposed to investigate electro-thermal effects in InP-DHBT integrated circuits. Various current mirror configurations are realized and measured to study the impact of transistor sizes and spacing on thermal effects. A electro-thermal model is proposed. It is based on the UCSD HBT model equations and includes an external thermal node for connection of a thermal coupling network. Simulations results agree well with the measurements ones.
Keywords :
coupled circuits; current mirrors; InP DHBT integrated current mirrors; UCSD HBT model equation; electrothermal effects; external thermal node; thermal coupling network; Couplings; Current measurement; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Mirrors; DHBT; Electrothermal effects; HBT-current mirror; InP; electro-thermal model;
Conference_Titel :
Signals Systems and Electronics (ISSSE), 2010 International Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6352-7
DOI :
10.1109/ISSSE.2010.5607081
