A Frequency-Compensation-Type Microwave Power Sensor Fabricated by GaAs MMIC Process

Author

Zhenxiang Yi ; Xiaoping Liao ; Hao Yan

Author_Institution

Key Lab. of Microelectromechanical Syst., Southeast Univ., Nanjing, China

Volume

14

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

2936

Lastpage

2937

Abstract

In this letter, a novel microwave power sensor is proposed to accomplish frequency compensation for 1-20-GHz application. Compared with traditional power sensor, this design has two extra power compensation ports in order to adjust the output voltage. This device is designed and fabricated with GaAs MMIC process. The measured return loss of three ports is less than -26 dB over 1-20 GHz. The output voltage increases with the incident power and the sensitivity is close to 0.115, 0.111, and 0.106 mV/mW at 1, 10, and 20 GHz, respectively. Frequency compensation is performed and the output voltage is compensated to that of 10 GHz. Clearly, when the incident power is fixed, the curve after compensation is flat and the voltage does not change with the frequency of the signal anymore.

Keywords

III-V semiconductors; MMIC; UHF detectors; UHF integrated circuits; compensation; electric sensing devices; frequency measurement; gallium arsenide; integrated circuit design; microwave detectors; microwave measurement; power measurement; GaAs; MMIC process; frequency 1 GHz to 20 GHz; frequency-compensation-type microwave power sensor; output voltage adjustment; power compensation; return loss measurement; Electromagnetic heating; Gallium arsenide; Microwave communication; Sensors; Transmission line measurements; Voltage measurement; Frequency compensation; GaAs MMIC; MEMS; microwave power sensor;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2014.2330817

Filename

6834761