DocumentCode
530881
Title
Modeling and parameter extraction of SiGe: C HBT´s with HICUM for the emerging terahertz era
Author
Ardouin, B. ; Raya, C. ; Schroter, M. ; Pawlak, A. ; Céli, D. ; Pourchon, F. ; Aufinger, K. ; Meister, T.F. ; Zimmer, T.
Author_Institution
XMOD Technol., Bordeaux, France
fYear
2010
fDate
27-28 Sept. 2010
Firstpage
25
Lastpage
28
Abstract
This paper presents a status of the HICUM model development activities (within the DOTFIVE project) for future technologies. Physics based scalable model libraries are realized for two of the most advanced SiGe:C HBT processes currently available. The parameter extraction methodology is described via two meaningful examples. Measurement and simulation comparisons are shown.
Keywords
Ge-Si alloys; carbon; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; submillimetre wave transistors; HBT; HICUM model development activities; SiGe:C; parameter extraction; parameter extraction methodology; scalable model libraries; Capacitance; Heterojunction bipolar transistors; Integrated circuit modeling; Junctions; Parameter extraction; Resistance; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7231-4
Type
conf
Filename
5613653
Link To Document