Title :
Modeling and parameter extraction of SiGe: C HBT´s with HICUM for the emerging terahertz era
Author :
Ardouin, B. ; Raya, C. ; Schroter, M. ; Pawlak, A. ; Céli, D. ; Pourchon, F. ; Aufinger, K. ; Meister, T.F. ; Zimmer, T.
Author_Institution :
XMOD Technol., Bordeaux, France
Abstract :
This paper presents a status of the HICUM model development activities (within the DOTFIVE project) for future technologies. Physics based scalable model libraries are realized for two of the most advanced SiGe:C HBT processes currently available. The parameter extraction methodology is described via two meaningful examples. Measurement and simulation comparisons are shown.
Keywords :
Ge-Si alloys; carbon; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; submillimetre wave transistors; HBT; HICUM model development activities; SiGe:C; parameter extraction; parameter extraction methodology; scalable model libraries; Capacitance; Heterojunction bipolar transistors; Integrated circuit modeling; Junctions; Parameter extraction; Resistance; Semiconductor device modeling;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
