TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT´s

Author

Al-Sa´di, M. ; d´Alessandro, V. ; Fregonese, S. ; Hong, S.-M. ; Jungemann, C. ; Maneux, C. ; Marano, I. ; Pakfar, A. ; Rinaldi, N. ; Sasso, G. ; Schröter, M. ; Sibaja-Hernandez, A. ; Tavernier, C. ; Wedel, G.

Author_Institution

IMS, Bordeaux, France

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

29

Lastpage

32

Abstract

The TCAD infrastructure developed within the DOTFIVE project is described. The hierarchical TCAD platform includes different Boltzmann equation solvers as well as simulators based on the widely used drift-diffusion and hydrodynamic transport models. In the latter case, accurate physical models were generated. The TCAD platform is used to explore the physics of extremely scaled devices and investigate new device concepts and architectures.

Keywords

Boltzmann equation; heterojunction bipolar transistors; hydrodynamics; technology CAD (electronics); Boltzmann equation; European DOTFIVE project; HBT; SiGe:C; TCAD simulation; drift-diffusion model; frequency 500 GHz; hydrodynamic transport model; Heterojunction bipolar transistors; High definition video; Integrated circuit modeling; Mathematical model; Performance evaluation; Semiconductor process modeling; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613654