Author :
Al-Sa´di, M. ; d´Alessandro, V. ; Fregonese, S. ; Hong, S.-M. ; Jungemann, C. ; Maneux, C. ; Marano, I. ; Pakfar, A. ; Rinaldi, N. ; Sasso, G. ; Schröter, M. ; Sibaja-Hernandez, A. ; Tavernier, C. ; Wedel, G.
Abstract :
The TCAD infrastructure developed within the DOTFIVE project is described. The hierarchical TCAD platform includes different Boltzmann equation solvers as well as simulators based on the widely used drift-diffusion and hydrodynamic transport models. In the latter case, accurate physical models were generated. The TCAD platform is used to explore the physics of extremely scaled devices and investigate new device concepts and architectures.
Keywords :
Boltzmann equation; heterojunction bipolar transistors; hydrodynamics; technology CAD (electronics); Boltzmann equation; European DOTFIVE project; HBT; SiGe:C; TCAD simulation; drift-diffusion model; frequency 500 GHz; hydrodynamic transport model; Heterojunction bipolar transistors; High definition video; Integrated circuit modeling; Mathematical model; Performance evaluation; Semiconductor process modeling; Silicon germanium;
