• DocumentCode
    530883
  • Title

    Advances in millimeter-wave and sub-millimeter-wave devices and circuits, Si to III-Vs

  • Author

    Hung, H. Alfred

  • Author_Institution
    Army Res. Lab., Adelphi, MD, USA
  • fYear
    2010
  • fDate
    27-28 Sept. 2010
  • Firstpage
    73
  • Lastpage
    73
  • Abstract
    This paper addresses the recent advances in InP-, GaN-, and Si/SiGe-based devices, monolithic integrated circuits, and subsystem integration at millimeter-wave (mmW) and sub-millimeter-wave (sub-mmW) frequencies. Current performance status and limitations, and future trend of technology development will be presented.
  • Keywords
    Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; millimetre wave circuits; monolithic integrated circuits; silicon; wide band gap semiconductors; GaN; InP; Si; Si-SiGe; monolithic integrated circuits; sub-millimeter-wave devices; sub-millimeter-wave frequencies; subsystem integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7231-4
  • Type

    conf

  • Filename
    5613655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=530883