Title :
Advances in millimeter-wave and sub-millimeter-wave devices and circuits, Si to III-Vs
Author_Institution :
Army Res. Lab., Adelphi, MD, USA
Abstract :
This paper addresses the recent advances in InP-, GaN-, and Si/SiGe-based devices, monolithic integrated circuits, and subsystem integration at millimeter-wave (mmW) and sub-millimeter-wave (sub-mmW) frequencies. Current performance status and limitations, and future trend of technology development will be presented.
Keywords :
Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; millimetre wave circuits; monolithic integrated circuits; silicon; wide band gap semiconductors; GaN; InP; Si; Si-SiGe; monolithic integrated circuits; sub-millimeter-wave devices; sub-millimeter-wave frequencies; subsystem integration;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
