Title :
Pushing conventional SiGe HBT technology towards "Dotfive" terahertz
Author :
Chantre, Alain ; Chevalier, Pascal ; Lacave, Thomas ; Avenier, Grégory ; Buczko, Michel ; Campidelli, Yves ; Depoyan, Linda ; Berthier, Ludovic ; Gacquière, Christophe
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper presents an overview of the millimeter-wave dedicated 130 nm SiGe BiCMOS technology used by STMicroelectronics as a starting point for DOTFIVE Project developments, and achievements during the first two years of the Project, which culminate in the demonstration of an intermediate 400 GHz fMAX SiGe HBT process, with good device control and reproducibility.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; DOTFIVE Project developments; STMicroelectronics; SiGe; SiGe BiCMOS technology; SiGe HBT technology; millimeter wave technology; size 130 nm; BiCMOS integrated circuits; Doping; Heterojunction bipolar transistors; Layout; Silicon; Silicon germanium; Heterojunction bipolar transistors (HBT); Nanotechnology; Silicon Germanium (SiGe);
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
