• DocumentCode
    530884
  • Title

    Pushing conventional SiGe HBT technology towards "Dotfive" terahertz

  • Author

    Chantre, Alain ; Chevalier, Pascal ; Lacave, Thomas ; Avenier, Grégory ; Buczko, Michel ; Campidelli, Yves ; Depoyan, Linda ; Berthier, Ludovic ; Gacquière, Christophe

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2010
  • fDate
    27-28 Sept. 2010
  • Firstpage
    21
  • Lastpage
    24
  • Abstract
    This paper presents an overview of the millimeter-wave dedicated 130 nm SiGe BiCMOS technology used by STMicroelectronics as a starting point for DOTFIVE Project developments, and achievements during the first two years of the Project, which culminate in the demonstration of an intermediate 400 GHz fMAX SiGe HBT process, with good device control and reproducibility.
  • Keywords
    BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; DOTFIVE Project developments; STMicroelectronics; SiGe; SiGe BiCMOS technology; SiGe HBT technology; millimeter wave technology; size 130 nm; BiCMOS integrated circuits; Doping; Heterojunction bipolar transistors; Layout; Silicon; Silicon germanium; Heterojunction bipolar transistors (HBT); Nanotechnology; Silicon Germanium (SiGe);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7231-4
  • Type

    conf

  • Filename
    5613656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=530884