DocumentCode :
530885
Title :
Development of wafer-scale graphene RF electronics
Author :
Moon, J.S. ; Curtis, D. ; Hu, M. ; Wong, D. ; McGuire, C. ; Campbell, P.M. ; Jernigan, G. ; Tedesco, J. ; VanMil, B. ; Myers-Ward, R. ; Eddy, C., Jr. ; Gaskill, D.K. ; Robinson, J. ; Fanton, M. ; Asbeck, P.
Author_Institution :
HRL Labs., LLC, Malibu, CA, USA
fYear :
2010
fDate :
27-28 Sept. 2010
Firstpage :
254
Lastpage :
257
Abstract :
In this talk, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on SiC and Si substrates.
Keywords :
epitaxial growth; epitaxial layers; field effect transistors; graphene; epitaxial graphene layer; field effect transistors; p-FET; silicon substrate; top-gated graphene n-FET; wafer-scale graphene RF electronics; Epitaxial growth; FETs; Frequency measurement; Gain; Gain measurement; Logic gates; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
Type :
conf
Filename :
5613657
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=530885
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