DocumentCode
530886
Title
A novel GaN-based high frequency varactor diode
Author
Jin, Chong ; Pavlidis, Dimitris ; Considine, Laurence
Author_Institution
Dept. of High Freq. Electron., Tech. Univ. Darmstadt, Darmstadt, Germany
fYear
2010
fDate
27-28 Sept. 2010
Firstpage
118
Lastpage
121
Abstract
GaN Schottky Varactor diodes with potential applications in high frequency multipliers and circuit tuning were designed, fabricated and characterized. The turn-on voltage of the diodes is ~0.5V, while a modulation ratio of ~1.5 was achieved. Equivalent circuit model extraction using measured S-parameters, confirmed the low-frequency extracted data and showed a weak bias dependent series resistance. Diodes with a thickness of 0.3 μm and a diameter of 4 μm had a breakdown voltage of 20 V and a cut-off frequency of 360 GHz.
Keywords
S-parameters; equivalent circuits; gallium compounds; varactors; GaN; GaN Schottky varactor diode; S-parameter; equivalent circuit model extraction; frequency 360 GHz; high frequency varactor diode; series resistance; voltage 20 V; Capacitance; Cutoff frequency; Equivalent circuits; Gallium nitride; Resistance; Schottky diodes; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7231-4
Type
conf
Filename
5613658
Link To Document