Title :
High-isolation low-loss SP7T pHEMT switch suitable for antenna switch modules
Author :
Yore, Michael D. ; Nevers, Corey A. ; Cortese, Philippe
Author_Institution :
TriQuint Semicond., Florida USA, Apopka, FL, USA
Abstract :
In this paper the design, fabrication and measurement of a high performance SP7T GaAs pHEMT switch for cellular phone applications is discussed. The antenna switch design uses a state of the art E/D-mode pHEMT process with an Ron*Coff Figure of Merit of 145 Ohm-fF. Excellent broadband insertion loss measurements across all cellular bands are less than 0.5dB, isolations are greater than 32dB while maintaining minimum harmonic distortion levels. Matching the switch to specific bands yielded insertion losses of 0.35dB at 0.915 GHz and 0.4dB at 1.95 GHz.
Keywords :
III-V semiconductors; antenna accessories; gallium arsenide; mobile handsets; power HEMT; 145 Ohm-fF merit; Ron*Coff Figure; antenna switch design; antenna switch modules; broadband insertion loss measurements; cellular bands; cellular phone applications; frequency 0.915 GHz to 1.95 GHz; high-isolation low-loss SP7T pHEMT switch; minimum harmonic distortion levels; noise figure 0.35 dB to 0.4 dB; Insertion loss; Logic gates; Loss measurement; Optical switches; PHEMTs; Resistors;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
