DocumentCode :
530936
Title :
Compact variable reflective-type SiGe phase shifter using lumped elements for 5 GHz applications
Author :
Hettak, K. ; Morin, G.A.
Author_Institution :
Commun. Res. Centre Canada, Ottawa, ON, Canada
fYear :
2010
fDate :
27-28 Sept. 2010
Firstpage :
102
Lastpage :
105
Abstract :
The design and results of a compact reflective-type phase shifter with transformed single-resonant loads for integrated SiGe phased-array implementations are presented. This circuit has been fabricated using a commercial 0.35 μm SiGe HBT process. A 3-dB 90° coupler with lumped elements instead of microstrip lines is used to allow for a more compact implementation. Phase control is enabled using a SiGe varactor with a capacitance tuning range of only 2.23. Equations are derived to precisely describe the phase control range versus capacitance control range for a transformed single resonated load (TSRL) configuration to allow efficient optimization. It is found that the varactor should be chosen as small as feasible to minimize sensitivity to parasitic resistance. A design procedure for reflective-type phase shifters is given. A phase shifter operating around 4.5 GHz has been designed using the design procedures outlined. The measured phase shift range is 230° for a control voltage varying from 0-4 V.
Keywords :
Ge-Si alloys; MMIC phase shifters; bipolar MMIC; waveguide couplers; 90° coupler; HBT process; MMIC phase shifters; SiGe; capacitance tuning range; compact variable reflective-type phase shifter; frequency 5 GHz; lumped elements; microstrip lines; parasitic resistance; phase control; size 0.35 mum; transformed single resonated load configuration; voltage 0 V to 4 V; Couplers; Impedance; Loss measurement; Phase shifters; Silicon germanium; Varactors; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
Type :
conf
Filename :
5613719
Link To Document :
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