High power, fully integrated SMT amplifiers with +47dBm OIP3 at 15 GHz and 6W, 38% efficiency at 30GHz using low cost, high volume PHEMT

Author

Morkner, Henrik ; Fujii, Kohei ; Ostermann, Brent

Author_Institution

Wireless Semicond. Div., Avago Technol., San Jose, CA, USA

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

412

Lastpage

415

Abstract

The system power amplifier´s linearity sets the maximum bit rate and the efficiency determines the maximum output power possible given a fixed heat dissipation or DC supply. This paper demonstrates that using a GaAs PHEMT 0.15μm gate process, industry leading performance can be attained. Shown is a 15GHz linear power amplifier capable of -52dBc IM3 at 21dBm output power (+47dBm OIP3). Also demonstrated is a 30GHz saturated power amplifier capable of making 38dBm (6W) output power at 38% peak power added efficiency. Both are fully matched to 50 Ω and have over 20dB of gain. Both are housed in a low cost laminate surface mount package.

Keywords

gallium arsenide; power HEMT; power amplifiers; surface mount technology; DC supply; GaAs; PHEMT; SMT amplifier; frequency 15 GHz; frequency 30 GHz; gain 20 dB; heat dissipation; linear power amplifier; linearity set; low cost laminate surface mount package; maximum bit rate; maximum output power; power 6 W; resistance 50 ohm; saturated power amplifier; size 0.15 mum; Frequency measurement; Logic gates; Loss measurement; PHEMTs; Power amplifiers; Power generation; Power measurement; FET Amplifiers; HEMT; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613724