Title :
Integrated active loop sensor in SiGe technology for near-field scanning
Author :
Uddin, Nasir ; Awny, Ahmed ; Thiede, Andreas
Author_Institution :
Dept. of High Freq. Electron., Univ. of Paderborn, Paderborn, Germany
Abstract :
This paper presents an integrated active loop sensor designed in IHP 0.25 μm SiGe:C HBT technology for near-field scanning of printed circuit boards (PCBs) as well as large scale integrated (LSI) circuits. Electromagnetic (EM) field simulation as well as on-wafer measurement results are presented for passive loop. A wideband amplifier with 23 dB gain and 10 GHz bandwidth is designed and measurement results are presented. Finally on-wafer measurement results for the integrated active loop sensor are presented.
Keywords :
heterojunction bipolar transistors; large scale integration; printed circuits; sensors; IHP 0.25 μm SiGe:C HBT technology; SiGe; SiGe technology; electromagnetic field simulation; integrated active loop sensor; large scale integrated circuits; near-field scanning; on-wafer measurement; printed circuit boards; Gain; Impedance; Magnetic field measurement; Magnetic fields; Probes; Semiconductor device measurement; Wire;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
