Title :
A 52–75 GHz frequency quadrupler in 0.25-µm SiGe BiCMOS process
Author :
Kuo, Nai-Chung ; Tsai, Zuo-Min ; Schmalz, Klaus ; Scheytt, Johann Christoph ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents a single-stage V-band quadrupler in 0.25-μm SiGe BiCMOS technology with an outstanding 36% bandwidth from 52 to 75 GHz. The quadrupler generates -10 dBm output power with 11.7 mW dc consumption and outmatches the reported results in overall efficiency when used in the design of LO chains with buffer amplifiers. In measurement, two approaches are adapted in favor of maximum output power and bandwidth.
Keywords :
BiCMOS integrated circuits; amplifiers; buffer circuits; frequency multipliers; silicon alloys; BiCMOS process; BiCMOS technology; buffer amplifiers; frequency 52 GHz to 75 GHz; frequency quadrupler; power 11.7 mW; single-stage V-band quadrupler; size 0.25 mum; Bandwidth; Harmonic analysis; Power amplifiers; Power generation; Power harmonic filters; Silicon germanium; Frequency multiplier; Quadrupler; SiGe; V-band; millimeter-wave;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
