A 3–14 GHz pseudo-differential distributed low noise amplifier

Author

De Hek, Peter ; Van Caekenberghe, Kown ; Van Dijk, Raymond

Author_Institution

TNO Defence, Security & Safety, The Hague, Netherlands

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

337

Lastpage

340

Abstract

A 3-14 GHz pseudo-differential distributed low noise amplifier, henceforth referred to as the distributed amplifier (DA), is reported. The DA is realized in the WIN PL15-10 process, which is a 0.15 μm Al_0.3Ga_0.7As/In_0.5Ga_0.5As low-noise depletion-mode pseudomorphic high electron mobility transistor (pHEMT) process. The DA features 10 pseudo-differential cascode pair unit cells. The chip also features V_GS and V_G2 gate bias circuits for threshold voltage, V_T, offset compensation. Measured values for the figures of merit are: a 3-14 GHz bandwidth, 17 ± 1 dB of small-signal gain, a <; 2.3 dB noise figure, a > 10 dB input and output return loss, and a one dB compression point of better than 15 dBm at 10 GHz. The DA draws 200 mA from a 3 V supply, and its dimensions are: 3.1 × 2.4 mm².

Keywords

distributed amplifiers; high electron mobility transistors; low noise amplifiers; Al_0.3Ga_0.7As-In_0.5Ga_0.5As; current 200 mA; distributed amplifier; frequency 3 GHz to 14 GHz; low-noise depletion mode pseudomorphic high electron mobility transistor process; offset compensation; pseudo-differential cascode pair unit cell; pseudo-differential distributed low noise amplifier; size 0.15 mum; small signal gain; voltage 3 V; Arrays; Frequency measurement; Logic gates; Microwave amplifiers; Microwave circuits; Microwave transistors; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613744