DocumentCode
530956
Title
GaN power FETs for next generation mobile communication systems
Author
Musser, M. ; Walcher, H. ; Maier, T. ; Quay, R. ; Dammann, M. ; Mikulla, M. ; Ambacher, O.
Author_Institution
Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg, Germany
fYear
2010
fDate
27-28 Sept. 2010
Firstpage
9
Lastpage
12
Abstract
This paper presents the RF-performance of Al-GaN/GaN high electron mobility transistors (HEMT) for applications at L-/S-band frequencies. The powerbars provide a linear gain of 20.3 dB with 90 W output power operated at 50 V drain voltage in cw-operation with a maximum drain efficency of 59% at 2.14 GHz. This gain level is competititve to state-of-the-art LDMOS.
Keywords
MOS integrated circuits; aluminium; gallium compounds; high electron mobility transistors; mobile communication; power field effect transistors; Al-GaN-GaN; HEMT; L-S-band frequencies; LDMOS; RF performance; efficiency 59 percent; frequency 2.14 GHz; gain 20.3 dB; high electron mobility transistors; next generation mobile communication systems; power 90 W; power FET; voltage 50 V; Gain; Gallium nitride; Logic gates; Microwave communication; Microwave transistors; Power generation; Power measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7231-4
Type
conf
Filename
5613746
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