A single bias 20W S-band HPA for radar applications

Author

Bettidi, A. ; Cetronio, A. ; Lavanga, S. ; Nanni, A.

Author_Institution

Eng. Div., SELEX Sist. Integrati S.p.A., Rome, Italy

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

397

Lastpage

400

Abstract

The development of a single bias S-band MMIC HPA designed for radar T/R module applications is reported. The chip was fabricated with a low-cost 0.5μm GaAs PHEMT process and is composed of two stages, with a final stage of 29 mm gate-width periphery. The MMIC power amplifier is designed by using a zero gate bias configuration and therefore is attractive due to the size and cost reduction. In the frequency bandwidth 2.4-3.6GHz, the HPA biased at Vd = 10 V delivers an output power of 20 W @ 4 dB of gain compression, with an associated PAE of circa 28%.

Keywords

III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; gallium arsenide; high electron mobility transistors; radar applications; GaAs; MMIC power amplifier; PHEMT process; frequency 2 GHz to 4 GHz; gain 4 dB; gate-width periphery; high power amplifier; power 20 W; radar T/R module; single bias S-band MMIC HPA; size 0.5 mum; voltage 10 V; zero gate bias configuration; Frequency measurement; Gain; Logic gates; MMICs; Power amplifiers; Power generation; Pulse measurements; MMICs; phased array radar; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613747