Title :
A single bias 20W S-band HPA for radar applications
Author :
Bettidi, A. ; Cetronio, A. ; Lavanga, S. ; Nanni, A.
Author_Institution :
Eng. Div., SELEX Sist. Integrati S.p.A., Rome, Italy
Abstract :
The development of a single bias S-band MMIC HPA designed for radar T/R module applications is reported. The chip was fabricated with a low-cost 0.5μm GaAs PHEMT process and is composed of two stages, with a final stage of 29 mm gate-width periphery. The MMIC power amplifier is designed by using a zero gate bias configuration and therefore is attractive due to the size and cost reduction. In the frequency bandwidth 2.4-3.6GHz, the HPA biased at Vd = 10 V delivers an output power of 20 W @ 4 dB of gain compression, with an associated PAE of circa 28%.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; gallium arsenide; high electron mobility transistors; radar applications; GaAs; MMIC power amplifier; PHEMT process; frequency 2 GHz to 4 GHz; gain 4 dB; gate-width periphery; high power amplifier; power 20 W; radar T/R module; single bias S-band MMIC HPA; size 0.5 mum; voltage 10 V; zero gate bias configuration; Frequency measurement; Gain; Logic gates; MMICs; Power amplifiers; Power generation; Pulse measurements; MMICs; phased array radar; power amplifiers;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
