DocumentCode
530974
Title
A 3 bit 20 GS/s flash ADC in 65 nm low power CMOS technology
Author
Ferenci, Damir ; Grözing, Markus ; Lang, Felix ; Berroth, Manfred
Author_Institution
Inst. of Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Stuttgart, Germany
fYear
2010
fDate
27-28 Sept. 2010
Firstpage
214
Lastpage
217
Abstract
A 20 GS/s 3 bit flash ADC with a wide analog bandwidth is realized in a 65 nm CMOS technology. By employing a fourfold parallelization a high sampling rate is achieved, while a large input bandwidth is maintained. The measured effective resolution is between 2 bit and 2.5 bit at a sampling rate of 12.8 GS/s and between 2 bit and 2.3 bit at a sampling rate of 18 GS/s. The power consumption of the ADC core is 2 W, the core area is 0.16 mm2.
Keywords
CMOS analogue integrated circuits; analogue-digital conversion; low-power electronics; power consumption; ADC core; flash ADC; fourfold parallelization; high sampling rate; low power CMOS technology; power 2 W; power consumption; size 65 nm; wide analog bandwidth; CMOS integrated circuits; Clocks; Driver circuits; Frequency measurement; Signal resolution; Synchronization; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7231-4
Type
conf
Filename
5613765
Link To Document