• DocumentCode
    530975
  • Title

    Simulation and measurement of back side etched inductors

  • Author

    Korndörfer, Falk ; Kaynak, Mehmet ; Mühlhaus, Volker

  • Author_Institution
    Innovations for High Performance Microelectron., Frankfurt (Oder), Germany
  • fYear
    2010
  • fDate
    27-28 Sept. 2010
  • Firstpage
    389
  • Lastpage
    392
  • Abstract
    Deep-silicon etching was applied to an inductor in a 0.25 μm SiGe:C BiCMOS process. Significant increase of quality factor was achieved. Different simulations of the inductor were done with a planar EM simulator. The way how to handle non-homogenous dielectrics in a planar EM simulator is shown. A good agreement between measurement and simulation can be seen. The effect of back side etching is well predicted by EM simulation.
  • Keywords
    BiCMOS integrated circuits; electromagnetic waves; etching; inductors; BiCMOS process; EM simulation; back side etched inductors; deep-silicon etching; measurement; Analytical models; Electrical resistance measurement; Frequency measurement; Inductors; Metals; Resistance; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7231-4
  • Type

    conf

  • Filename
    5613766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=530975