Title :
Assessment of power-transistor package models: Distributed versus lumped approach
Author :
Rudolph, Matthias ; Heinrich, Wolfgang
Author_Institution :
Dept. of RF & Microwave Tech., Brandenburg Univ. of Technol., Cottbus, Germany
Abstract :
Power transistors basically consist of a number of active transistors that are mounted in parallel inside the package. High powers require large transistor sizes, which translates into significant physical dimensions. For circuit design, on the other hand, a lumped model is favorable for sake of simulation speed and numerical convergence. This paper addresses questions related to reducing the equivalent circuit of a package into a lumped model. A packaged 60 W GaN L-band power transistor is used as an example. Starting from a distributed equivalent circuit, a lumped model is derived, and the accuracies of the models are discussed relating to measurement.
Keywords :
equivalent circuits; power transistors; semiconductor device models; GaN; L-band power transistor; active transistors; circuit design; distributed approach; distributed equivalent circuit; lumped approach; lumped model; numerical convergence; power 60 W; power-transistor package models; simulation speed; Integrated circuit modeling; Load modeling; Logic gates; Numerical models; Power transistors; Solid modeling; Transistors; MODFETs; power transistors; semiconductor device modeling; semiconductor device packaging;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
