Title :
GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C
Author :
Medjdoub, F. ; Marcon, D. ; Das, J. ; Derluyn, J. ; Cheng, K. ; Degroote, S. ; Vellas, N. ; Gaquière, C. ; Germain, M. ; Decoutere, S.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this paper, the possibility to achieve output power density exceeding 10 W/mm at 2 GHz using 1 mm gate width GaN HEMTs on 4” large diameter Si (111) substrate is demonstrated for the first time. Additionally, storage tests at 325°C reveal the high thermal stability of these devices which we attribute to the in-situ grown SiN cap layer. These data are a first step towards a cost-effective high RF power density for high reliability GaN-on-Si HEMT technology.
Keywords :
III-V semiconductors; UHF field effect transistors; gallium compounds; high electron mobility transistors; thermal stability; wide band gap semiconductors; GaN-Si; HEMT; frequency 2 GHz; gate width; high RF power density; temperature 325 C; thermal stability; Gallium nitride; HEMTs; Logic gates; MODFETs; Silicon; Substrates; Thermal stability;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
