Title :
A SPDT switch in a standard 45 nm CMOS process for 94 GHz Applications
Author :
Quémerais, T. ; Moquillon, L. ; Fournier, J-M ; Benech, P.
Author_Institution :
IMEP-LHAC, UMR INPG/UJF/US/CNRS, Grenoble, France
Abstract :
A fully integrated single-pole double-throw (SPDT) transmit/receive switch (T/R switch) is implemented on a standard 45nm CMOS process. This circuit is dedicated to fully integrated CMOS RF front end modules operating at 94 GHz. The traveling-wave topology was used to minimize the insertion loss at millimeter wave frequencies. The switch exhibits a measured insertion loss of 5.3 dB, an isolation of 20.5 dB, and a return loss at Tx/Rx port of -12 dB at 94 GHz. An input 1dB compression point higher than 11 dBm is measured at 60 GHz and 15 dBm at 94 GHz after simulation. Excellent agreement between measurement and simulation results is observed.
Keywords :
CMOS integrated circuits; microwave switches; millimetre waves; CMOS RF front end module; SPDT switch; frequency 60 GHz; frequency 94 GHz; insertion loss; millimeter wave frequencies; single-pole double-throw transmit/receive switch; size 45 nm; traveling-wave topology; CMOS integrated circuits; CMOS process; Insertion loss; Loss measurement; Metals; Switches; Switching circuits;
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1