Title :
A triple-band SiGe HBT differential VCO using a reconfigurable multi-band resonator
Author :
Itoh, Yasushi ; Tanaka, Shota
Author_Institution :
Electr. & Inf. Eng., Shonan Inst. of Technol., Fujisawa, Japan
Abstract :
A triple-band SiGe HBT differential VCO has been developed for the next generation multi-band and/or multi-mode wireless radios. It utilizes a reconfigurable multi-band resonator which is based on a dual-band resonator but can achieve a triple-band resonation by using a band-selective switch. The band-selective switch is comprised of a two-terminal SiGe HBT with base and collector short-circuited and can provide three different band-switching conditions for the multi-band resonator. The implemented 0.35-μm SiGe HBT differential VCO has achieved a low-band oscillation from 0.48 to 0.87 GHz, a middle-band oscillation from 1.75 to 1.92 GHz, and a high-band oscillation from 1.91 to 2.13 GHz. The phase noise at 100 kHz offset varies from -100 to -115dBc/Hz for all bands. This is the first report on the triple-band differential VCO using a dual-band resonator.
Keywords :
Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; phase noise; resonators; semiconductor materials; switches; voltage-controlled oscillators; SiGe; band-selective switch; band-switching conditions; dual-band resonator; frequency 0.48 GHz to 0.87 GHz; frequency 1.75 GHz to 1.92 GHz; frequency 1.91 GHz to 2.13 GHz; frequency 100 kHz; high-band oscillation; low-band oscillation; middle-band oscillation; multimode wireless radios; phase noise; reconfigurable multiband resonator; size 0.35 mum; triple-band HBT differential VCO; triple-band resonation; Current measurement; Heterojunction bipolar transistors; Phase noise; Silicon germanium; Switches; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
