DocumentCode :
531061
Title :
Doherty power amplifier design employing direct input power dividing for base station applications
Author :
Kim, Jungjoon ; Moon, Junghwan ; Kang, Daehyun ; Jee, Seunghoon ; Woo, Young Yun ; Kim, Bumman
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
866
Lastpage :
869
Abstract :
For base station applications, -3 dB hybrid coupler has been used for input power dividing stage of Doherty power amplifier (PA). The input direct dividing technique has only been applied for handset applications, because the coupler occupies a large size on a chip. However, this technique provides advantages on power gain and efficiency for base station applications, also. In this paper, we have proposed a design procedure of Doherty PA applying the input direct dividing technique. Implemented Doherty PA using two Cree CGH40045 GaN HEMT achieves excellent drain efficiency of 51.2% at 41 dBm output power for long term evolution (LTE) 1FA signal at 2.14-GHz. Moreover, the Doherty PA could be linearized to -45 dBc using the digital feedback predistortion technique.
Keywords :
HEMT circuits; III-V semiconductors; coupled circuits; distortion; gallium compounds; power amplifiers; wide band gap semiconductors; Cree CGH40045 HEMT; Doherty power amplifier design; GaN; base station application; digital feedback predistortion technique; direct input power dividing; frequency 2.14 GHz; handset application; hybrid coupler; Base stations; Gain; Impedance; Modulation; Peak to average power ratio; Power amplifiers; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5614798
Link To Document :
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